DMNH6035SPDWQ

Document number: DS40225 Rev. 8 - 2

4 of 7

www.diodes.com

March 2023

© 2023 Copyright Diodes Incorporated. All Rights Reserved.

DMNH6035SPDWQ

0

2

4

6

8

10

0

2

4

6

8

10

12

14

16

Q

g (nC)

Figure 11. Gate Charge

V

DS = 30V, ID = 20A

0

0.02

0.04

0.06

0.08

-50

-25

0

25

50

75

100

125

150

175

T

J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

V

GS = 10V, ID = 15A

V

GS = 4.5V, ID = 10A

0.1

1

10

100

1000

1

10

100

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

T

J(Max) = 175℃

T

C = 25℃

Single Pulse

DUT on Infinite

Heatsink

V

GS = 10V

R

DS(ON)

Limited

P

W = 1s

P

W = 100ms

P

W = 10ms

P

W = 1ms

P

W = 100µs

P

W = 10µs

P

W = 1µs

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

T

J = 125

oC

T

J = 85

oC

T

J = 25

oC

T

J = -55

oC

V

GS = 0V

T

J = 150

oC

T

J = 175

oC

1

10

100

1000

10000

0

5

10 15 20 25 30 35 40 45 50 55 60

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f = 1MHz

C

rss

C

oss

C

iss

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

175

T

J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

I

D = 250μA

I

D = 1mA