DMN5040LSS

Document number: DS38616 Rev. 1 - 2

2 of 7

www.diodes.com

September 2016

© Diodes Incorporated

DMN5040LSS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

50

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

5.2

4.2

A

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

IDM

25

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

1.8

A

Avalanche Current (Note 7) L = 0.1mH

IAS

13

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

8

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5) ( TA = +25°C)

Steady State

PD

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

RJA

99

°C/W

Total Power Dissipation (Note 6) ( TA = +25°C)

Steady State

PD

1.6

W

Thermal Resistance, Junction to Ambient (Note 6)

RJA

77

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

13

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

50

-

-

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

-

-

1

μA

VDS = 50V, VGS = 0V

Gate-Source Leakage

IGSS

-

-

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

-

3.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

-

29

40

m

Ω

VGS = 10V, ID = 4.5A

-

37

60

VGS = 4.5V, ID = 3.5A

Diode Forward Voltage

VSD

-

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

-

836

-

pF

VDS = 30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

-

42

-

pF

Reverse Transfer Capacitance

Crss

-

28

-

pF

Gate Resistance

Rg

-

2.2

-

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

-

6.5

-

nC

VDS = 30V, ID = 5A

Total Gate Charge (VGS = 10V)

Qg

-

14.5

-

nC

Gate-Source Charge

Qgs

-

2.0

-

nC

Gate-Drain Charge

Qgd

-

2.3

-

nC

Turn-On Delay Time

tD(ON)

-

3.1

-

ns

VDD = 30V, VGS = 10V,

RL = 6Ω, Rg = 6Ω, ID = 5A

Turn-On Rise Time

tR

-

5.0

-

ns

Turn-Off Delay Time

tD(OFF)

-

13.4

-

ns

Turn-Off Fall Time

tF

-

3.7

-

ns

Reverse Recovery Time

tRR

-

9.4

-

ns

IF= 5A, di/dt=100A/μs

Reverse Recovery Charge

QRR

-

3.7

-

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.