DMP4026LSD

Document number: DS44830 Rev. 2 - 2

4 of 7

www.diodes.com

March 2023

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DMP4026LSD

V

GS = 10V, ID = 3.0A

V

GS = 4.5V, ID = 3.0A

0.008

0.011

0.014

0.017

0.02

0.023

0.026

0.029

0.032

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

I

D = 250μA

I

D = 1mA

0

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction Temperature

T

J = -55℃

T

J = 25℃

T

J = 85℃

T

J = 125℃

T

J = 150℃

V

GS = 0V

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

C

rss

C

oss

C

iss

f = 1MHz

10

100

1000

10000

0

8

16

24

32

40

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V

DS = 20V, ID = 3A

0

2

4

6

8

10

0

9

18

27

36

45

Q

g (nC)

Figure 11. Gate Charge

R

DS(ON)

Limited

T

J(Max) = 150℃

T

A = 25℃

Single Pulse

DUTon

1*MRP board

V

GS = 10V

Pw = 1ms

Pw = 100

μs

Pw = 1s

Pw = 100ms

Pw = 10ms

Pw = 10s

DC

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area