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DMNH45M7SCT датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMNH45M7SCT
подробное описание детали  40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH45M7SCT датащи(HTML) 4 Page - Diodes Incorporated

  DMNH45M7SCT Datasheet HTML 1Page - Diodes Incorporated DMNH45M7SCT Datasheet HTML 2Page - Diodes Incorporated DMNH45M7SCT Datasheet HTML 3Page - Diodes Incorporated DMNH45M7SCT Datasheet HTML 4Page - Diodes Incorporated DMNH45M7SCT Datasheet HTML 5Page - Diodes Incorporated DMNH45M7SCT Datasheet HTML 6Page - Diodes Incorporated  
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DMNH45M7SCT
Document number: DS39969 Rev. 4 - 2
4 of 6
www.diodes.com
August 2018
© Diodes Incorporated
DMNH45M7SCT
0
0.002
0.004
0.006
0.008
0.01
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 20A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A = 125
oC
T
A = 85
oC
T
A = 25
oC
T
A = -55
oC
V
GS = 0V
T
A = 150
oC
T
A = 175
oC
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
Qg (nC)
Figure 11. Gate Charge
V
DS = 20V, ID = 20A
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =100ms
P
W =100ms
P
W =1µs
DC
R
DS(ON) Limited
P
W =10ms
P
W =1ms
T
J(Max) = 175℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS= 10V
P
W =10ms
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8.Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA
100
1000
10000
0
10
20
30
40
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss



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