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DMN3012LEG датащи(PDF) 6 Page - Diodes Incorporated

номер детали DMN3012LEG
подробное описание детали  30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  10 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3012LEG датащи(HTML) 6 Page - Diodes Incorporated

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DMN3012LEG
Document number: DS41633 Rev. 2 - 2
6 of 10
www.diodes.com
March 2019
© Diodes Incorporated
DMN3012LEG
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 13. Q1 Gate Threshold Variation vs. Junciton
Temperature
I
D = 1mA
I
D = 250µA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 14. Q2 Gate Threshold Variation vs. Junciton
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 15. Q1 Diode Forward Voltage vs. Current
V
GS = 0V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 16. Q2 Diode Forward Voltage vs. Current
V
GS = 0V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.1
1
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 17. Q1 Typical Drain-Source Leakage Current
vs. Voltage
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.1
1
10
100
1000
10000
100000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 18. Q2 Typical Drain-Source Leakage Current
vs. Voltage
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC



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