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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BFG540W/XR датащи(PDF) 2 Page - NXP Semiconductors |
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BFG540W/XR датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page  2000 May 23 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. PINNING PIN DESCRIPTION BFG540 (Fig.1) Code: N37 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: N43 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: N49 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143B. handbook, 2 columns Top view MSB014 12 3 4 Fig.2 SOT143R. handbook, 2 columns Top view MSB035 1 2 4 3 |
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