BFG505SLASHX datasheet(2/16 Pages) PHILIPS

2 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505W; BFG505W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end applications in the GHz range, such as

analog and digital cellular telephones, cordless telephones

(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,

satellite television tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER

CODE

BFG505W

BFG505W/X

PINNING

DESCRIPTION

BFG505W

BFG505W/X

collector

base

emitter

base

emitter

Fig.1 Simplified outline SOT343N.

handbook, halfpage

Top view

MBK523

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage RBE =0

−−

collector current (DC)

−−

Ptot

total power dissipation

Ts ≤ 85 °C

−−

500

hFE

DC current gain

IC = 5 mA; VCE = 6 V

120

250

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

−

0.2

−

transition frequency

IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb =25 °C

−

GHz

GUM

maximum unilateral

power gain

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C

−

IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb =25 °C12

−

|S21|2

insertion power gain

IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C15

−

noise ﬁgure

Γs =Γopt; IC = 1.25 mA; VCE =6V; f=2GHz

−

1.9

−

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