MAC4DHM datasheet(2/5 Pages) HAOPIN

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HAOPIN MICROELECTRONICS CO.,LTD.

Sensitive Gate Triacs

HPM

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

DRM

T(RMS)

stg

G(AV)

Repetitive peak off-state

Voltages

RMS on-state current

Circuit fusing

consideration

Peak gate current

Peak gate voltage

Peak gate power

Pulse width

s Tc=93

Pulse width

s Tc=93

Pulse width

s Tc=93

t=8.3ms Tc=108

Average gate power

Storage temperature

Operating junction

Temperature range

Full sine wave 60 Hz

t=8.3ms

Tc=93

Tj=-40 to 110

,sine wave,

50 to 60 Hz,Gate open

6.6

0.2

0.1

0.5

-40

600

110

150

SYMBOL

PARAMETER

CONDITIONS

MIN

T =25 C unless otherwise stated

Static characteristics

DRM

RRM

V =Rated V

;

Gate open

DRM

RRM

Dynamic Characteristics

D/dt

(dl/dt)c

Gate trigger current

Gate trigger voltage

Latching current

Peak Repetitive

blocking current

Holding current

Peak on-state voltage

I = 6.0A

Gate Non-trigger voltage

Critical rate of rise of

Off-state voltage

Rate of change of

commutating current

V =12V;R =100

V =12V,I =5.0 mA

V =12V,I =10 mA

V =12V,gote open,lnitiating current= 200mA

Tj=25

Tj=125

Tj=110

UNIT

MAX

TYP

0.5

1.75

5.2

2.1

2.2

0.62

0.57

0.65

0.74

1.3

0.1

0.4

3.0

1.5

1.3

1.6

A/ms

V =67% V

gate open;Tj=110

;

DRM

V =200V, I =1.8A

Tj=110

, f=250 Hz,CL=5.0

fd,

LL=80 mH,RS=56

CS=0.03

DTM

dv/dt=1.0V/

1.8

2.1

2.4

4.2

MT2(+),G(+)

MT2(+),G(-)

MT2(-),G(-)

MT2(-),G(+)

MT2(+),G(+)

MT2(+),G(-)

MT2(-),G(-)

MT2(-),G(+)

MT2(+),G(+)

MT2(+),G(-)

MT2(-),G(-)

MT2(-),G(+)

0.01

2.0

MAC4DHM

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