1999 Apr 12

2

Philips Semiconductors

Product specification

PNP power transistors

BD136; BD138; BD140

FEATURES

• High current (max. 1.5 A)

• Low voltage (max. 80 V).

APPLICATIONS

• General purpose power applications, e.g. driver stages

in hi-fi amplifiers and television circuits.

DESCRIPTION

PNP power transistor in a TO-126; SOT32 plastic

package. NPN complements: BD135, BD137 and BD139.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to metal part of

mounting surface

3

base

Fig.1

Simplified outline (TO-126; SOT32)

and symbol.

handbook, halfpage

MAM272

12

3

Top view

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BD136

−−45

V

BD138

−−60

V

BD140

−−100

V

collector-emitter voltage

open base

BD136

−−45

V

BD138

−−60

V

BD140

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1.5

A

peak collector current

−−2A

peak base current

−−1A

total power dissipation

−

8W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C