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TS5A3166DBVR датащи(PDF) 13 Page - National Semiconductor (TI)

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номер детали TS5A3166DBVR
подробное описание детали  0.9-OHM SPST ANALOG SWITCH
PDF  21 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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TS5A3166DBVR датащи(HTML) 13 Page - National Semiconductor (TI)

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TS5A3166
0.9 W SPST ANALOG SWITCH
SCDS186 − FEBRUARY 2005
www.ti.com
13
PIN DESCRIPTION
PIN
NUMBER
NAME
DESCRIPTION
1
NO
Normally open
2
COM
Common
3
GND
Digital ground
4
IN
Digital control pin to connect COM to NO
5
V+
Power supply
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under
worst-case input and output conditions
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ∆VCOM, CL is the load capacitance, and ∆VCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency at which the gain of an ON channel is −3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND



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