BCY87 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BCY87; BCY88; BCY89

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

Ptot

total power dissipation

Tamb ≤ 25 °C

−

150

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

K/mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =20V; Tamb =90 °C

BCY87

−−

5nA

BCY88

−−

ICBO

collector cut-off current

IE = 0; VCB =20V

BCY89

−−

hFE

DC current gain

VCE =10V

BCY87

IC =5 µA80

−−

BCY88

IC = 500 µA

120

−

600

BCY89

IC = 10 mA

100

−

600

hFE

DC current gain

IC =50 µA; VCE = 10 V

100

−

450

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz −−

3.5

transition frequency

IE = −50 µA; VCE =10V;

f = 100 MHz

−−

MHz

IE = −500 µA; VCE =10V;

f = 100 MHz

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2kΩ; f = 10 Hz to 15.7 kHz

−−

4dB

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2kΩ; f = 1 kHz; B = 200 Hz

BCY87

−−

4dB

BCY88; BCY89

−−

5dB

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