Nexperia

BAV23

Dual high-voltage switching diodes

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

500

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

360

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 100 mA

-

-

1

V

VF

forward voltage

IF = 200 mA

-

-

1.25

V

VR = 200 V

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz

-

-

2

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;

RL = 100 Ω; Tamb = 25 °C

-

-

50

ns

VF (V)

0

1.6

1.2

0.4

0.8

006aab212

200

400

600

IF

(mA)

0

(1)

(3)

(4)

(2)

(1) Tamb = 150° C

(2) Tamb = 85° C

(3) Tamb = 25° C

(4) Tamb = -40° C

Fig. 1. Forward current as a function of forward

voltage; typical values

mbg703

10

1

102

IFSM

(A)

10- 1

tp (µs)

1

104

103

10

102

Based on square wave currents.

Tj(init) = 25 °C

Fig. 2. Non-repetitive peak forward current as a

function of pulse duration; maximum values

BAV23

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 April 2023

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