BCW60 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BCW60 series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =32V

−−

IE = 0; VCB =32V; Tamb = 150 °C −−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

hFE

DC current gain

IC =10 µA; VCE =5V

BCW60B

−−

BCW60C

−−

BCW60D

100

−−

DC current gain

IC = 2 mA; VCE =5V

BCW60B

180

−

310

BCW60C

250

−

460

BCW60D

380

−

630

DC current gain

IC = 50 mA; VCE =1V

BCW60B

−−

BCW60C

−−

BCW60D

100

−−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.25 mA

−

350

IC = 50 mA; IB = 1.25 mA

100

−

550

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.25 mA

600

−

850

IC = 50 mA; IB = 1.25 mA

0.7

−

1.05

VBE

base-emitter voltage

IC =10 µA; VCE =5V

−

520

−

IC = 2 mA; VCE = 5 V

550

650

750

IC = 50 mA; VCE =1V

−

780

−

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−

1.7

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz −

−

transition frequency

IC = 10 mA; VCE =5V;

f = 100 MHz; note 1

100

250

−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2kΩ; f = 1 kHz; B = 200 Hz

−

26dB

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