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BCV65 датащи(PDF) 2 Page - NXP Semiconductors |
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BCV65 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 Apr 22 2 Philips Semiconductors Product specification NPN/PNP general purpose transistor BCV65 FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION An NPN/PNP matched pair transistor in a SOT143B plastic package. MARKING TYPE NUMBER MARKING CODE BCV65 97p PINNING PIN DESCRIPTION 1, 3 collector 2 common base 4 common emitter Fig.1 Simplified outline (SOT143B) and symbol. handbook, halfpage 43 2 1 Top view MAM333 1 2 3 4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 30 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation (per device) Tamb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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