R07DS1516EJ0100 Rev.1.00

Page 1 of 7

Jun.10.2022

Datasheet

NP83P06PDG

-60V – -83A – P-channel Power MOS FET

Application : Automotive

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features



Super low on-state resistance : RDS(on) = 8.8 m

 Max. ( VGS = -10 V, ID = -41.5 A )

RDS(on) = 12 m

 Max. ( VGS = -4.5 V, ID = -41.5 A )



Low input capacitance : Ciss = 10100 pF Typ.



Designed for automotive application and AEC-Q101 qualified.



Pb-free (This product does not contain Pb in the external electrode)

Outline

Absolute Maximum Ratings

(Ta=25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

-60

V

Gate to Source Voltage (VDS = 0 V)

VGSS



20

V

Drain Current (DC) (Tc = 25 °C)

ID(DC)



83

A

Drain Current (pulse)

ID(pulse) Notes1



249

A

Total Power Dissipation (Tc = 25 °C)

PT1

150

W

Total Power Dissipation (Ta = 25 °C)

PT2

1.8

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

-55 to 175

°C

Single Avalanche Current

IAS Notes2

49

A

Single Avalanche Energy

EAS Notes2

240

mJ

Notes 1. PW

 10

s , Duty Cycle  1%

2. Starting Tch=25℃ , VDD = -30V , RG = 25

 , VGS = -20  0V , L = 100H

Gate

Drain

Source

1. Gate

2. Drain

3. Source

4. Drain(Fin)

Equivalent circuit

MP-25ZP (TO-263)

4

1

2

3

R07DS1516EJ0100

Rev.1.00

Jun. 10, 2022