1999 Apr 08

2

Philips Semiconductors

Product specification

PNP general purpose double transistor

BCV62

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 30 V)

• Matched pair.

APPLICATIONS

• For use in applications where the working point must be

independent of temperature

• Current mirrors.

DESCRIPTION

PNP double transistor in a SOT143B plastic package.

NPN complement: BCV61.

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BCV62

3Mp

BCV62B

3Kp

BCV62A

3Jp

BCV62C

3Lp

PINNING

PIN

DESCRIPTION

1

collector TR2; base TR1 and TR2

2

collector TR1

3

emitter TR1

4

emitter TR2

Fig.1 Simplified outline (SOT143B) and symbol.

handbook, halfpage

4

12

3

MAM292

Top view

21

34

TR1

TR2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage TR1

open emitter

−−30

V

collector-emitter voltage TR1

open base

−−30

V

emitter-base voltage

−−6V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current TR1

−−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C