Nexperia

BAS321J

High-voltage switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

-

1

V

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

-

1.25

V

VR = 200 V; pulsed; Tj = 25 °C

-

-

100

nA

IR

reverse current

VR = 200 V; pulsed; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

-

-

2

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tj = 25 °C

-

-

50

ns

VF (V)

0

2.0

1.5

0.5

1.0

aaa-028258

0.2

0.3

0.1

0.4

0.5

IF

(A)

0

(1)

(4)

(3)

(2)

(1) Tamb = 150° C

(2) Tamb = 85° C

(3) Tamb = 25° C

(4) Tamb = -40° C

Fig. 3. Forward current as a function of forward

voltage; typical values; (linear scale)

aaa-028259

10-2

10-3

10-1

1

IF

(A)

10-4

VF (V)

0

1.75

1.25 1.50

1.00

0.75

0.25 0.50

(1) (2) (3) (4)

(1) Tj = 150° C

(2) Tj = 85° C

(3) Tj = 25° C

(4) Tj = -40° C

Fig. 4. Forward current as a function of forward

voltage; typical values; (logarithmic scale)

BAS321J

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Product data sheet

23 March 2018

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