NP36P06SLG

R07DS1510EJ0100 Rev.1.00

Page 2 of 7

May.27.2022

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-c) Notes3

2.68

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-a) Notes3

125

°C/W

Electrical Characteristics

(Ta=25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

—

—

-10

A

VDS = -60 V, VGS = 0 V

Gate Leakage Current

IGSS

—

—



10

A

VGS =  20 V, VDS = 0 V

Gate to Source Cut-off Voltage

VGS(off)

-1.0

-2.0

-2.5

V

VDS = -10 V, ID = -1mA

Forward Transfer Admittance

| yfs | Notes4

12

—

—

S

VDS = -10 V, ID = -18 A

Drain to Source On-state Resistance

RDS(on)1 Notes4

—

24

30

m



VGS = -10 V, ID = -18 A

RDS(on)2 Notes4

—

27

40

m



VGS = -4.5 V, ID = -18 A

Input Capacitance

Ciss

—

3200

—

pF

VDS = -10 V

VGS = 0 V

f = 1 MHz

Output Capacitance

Coss

—

350

—

pF

Reverse Transfer Capacitance

Crss

—

205

—

pF

Turn-on Delay Time

td(on)

—

7

—

ns

VDD = -30 V

ID = -18 A

VGS = -10 V

RG = 0



Rise Time

tr

—

12

—

ns

Turn-off Delay Time

td(off)

—

190

—

ns

Fall Time

tf

—

110

—

ns

Total Gate Charge

Qg

—

52

—

nC

VDD = -48 V

VGS = -10 V

ID = -36 A

Gate to Source Charge

Qgs

—

6.9

—

nC

Gate to Drain Charge

Qgd

—

15

—

nC

Body Diode Forward Voltage

VF(S-D) Notes4

—

—

1.2

V

IF = -36 A, VGS = 0 V

Reverse Recovery Time

trr

—

46

—

ns

IF = -36 A, VGS = 0 V

di/dt = -100 A/

s

Reverse Recovery Charge

Qrr

—

75

—

nC

Notes 3. Designed target value on Renesas measurement condition. Not subject to production test.

4. Pulse test.