NP15P04SLG

R07DS1509EJ0100 Rev.1.00

Page 2 of 7

May.20.2022

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-c) Notes3

5.0

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-a) Notes3

125

°C/W

Electrical Characteristics

(Ta=25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

—

—

-10

A

VDS = -40 V, VGS = 0 V

Gate Leakage Current

IGSS

—

—



10

A

VGS =  20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

-1.0

-1.6

-2.5

V

VDS = VGS, ID = -250

A

Forward Transfer Admittance

| yfs | Notes4

6

12

—

S

VDS = -10 V, ID = -7.5 A

Drain to Source On-state Resistance

RDS(on)1 Notes4

—

31

40

m



VGS = -10 V, ID = -7.5 A

RDS(on)2 Notes4

—

38

60

m



VGS = -4.5 V, ID = -7.5 A

Input Capacitance

Ciss

—

1100

—

pF

VDS = -10 V

VGS = 0 V

f = 1 MHz

Output Capacitance

Coss

—

190

—

pF

Reverse Transfer Capacitance

Crss

—

140

—

pF

Turn-on Delay Time

td(on)

—

7

—

ns

VDD = -20 V

ID = -7.5 A

VGS = -10 V

RG = 0



Rise Time

tr

—

5

—

ns

Turn-off Delay Time

td(off)

—

100

—

ns

Fall Time

tf

—

65

—

ns

Total Gate Charge

Qg

—

23

—

nC

VDD = -32 V

VGS = -10 V

ID = -15 A

Gate to Source Charge

Qgs

—

3

—

nC

Gate to Drain Charge

Qgd

—

7

—

nC

Body Diode Forward Voltage

VF(S-D) Notes4

—

0.94

1.5

V

IF = -15 A, VGS = 0 V

Reverse Recovery Time

trr

—

32

—

ns

IF = -15 A, VGS = 0 V

di/dt = -100 A/

s

Reverse Recovery Charge

Qrr

—

33

—

nC

Note 3. Designed target value on Renesas measurement condition. Not subject to production test.

4. Pulse test.