IXTH3N120 datasheet(1/4 Pages) IXYS

номер детали	IXTH3N120

подробное описание детали	High Voltage Power MOSFETs

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производитель	IXYS [IXYS Corporation]

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N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Features

International standard packages

Low R

DS (on)

Rated for unclamped Inductive load

Switching (UIS)

Molding epoxies meet UL 94 V-0

flammability classification

Advantages

Easy to mount

Space savings

High power density

High Voltage

Power MOSFETs

TO-247

G = Gate

D

= Drain

S = Source

TAB = Drain

IXTH 3N120

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

3N120

1200

V

3N110

1100

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

3N120

1200

V

3N110

1100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C3

A

I

DM

T

C = 25°C, pulse width limited by TJM

12

A

I

AR

T

C = 25°C3

A

E

AR

T

C = 25°C

20

mJ

E

AS

700

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

150

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

1200

V

GS(th)

V

DS = VGS, ID = 250 µA

2.5

4.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8 VDSS

T

J

= 25

°C25

µA

V

GS = 0 V

T

J

= 125

°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

4.5

Ω

Note 1

Preliminary Data Sheet

DS99025(03/03)

V

DSS

= 1200 V

I

D25

=3 A

V

DS(on)

=

4.5

Ω

G

D S

D (TAB)

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