BC856W datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC856W; BC857W

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−4

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

hFE

DC current gain

IC = −2 mA; VCE = −5V;

see Figs 2, 3 and 4

BC856W

125

475

BC857W

125

800

BC856AW; BC857AW

125

250

BC856BW; BC857BW

220

475

BC857CW

420

800

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−300

IC = −100 mA; IB = −5 mA; note 1

−−650

VBEsat

base-emitter saturation voltage

IC = −100 mA; IB = −5 mA; note 1

−−950

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600

−750

IC = −10 mA; VCE = −5V

−−820

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

5pF

emitter capacitance

IC =ic =0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5 V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

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