поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

BC856S датащи(PDF) 2 Page - NXP Semiconductors

номер детали BC856S
подробное описание детали  PNP general purpose double transistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC856S датащи(HTML) 2 Page - NXP Semiconductors

  BC856S Datasheet HTML 1Page - NXP Semiconductors BC856S Datasheet HTML 2Page - NXP Semiconductors BC856S Datasheet HTML 3Page - NXP Semiconductors BC856S Datasheet HTML 4Page - NXP Semiconductors BC856S Datasheet HTML 5Page - NXP Semiconductors BC856S Datasheet HTML 6Page - NXP Semiconductors BC856S Datasheet HTML 7Page - NXP Semiconductors BC856S Datasheet HTML 8Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
1999 Aug 24
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
FEATURES
• Two transistors in one package
• Reduces number of components and board space
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and small signal
amplification.
DESCRIPTION
PNP double transistor in an SC-88 (SOT363) plastic six
lead package.
PINNING
MARKING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
TYPE NUMBER
MARKING CODE
BC856S
5Ft
handbook, halfpage
13
2
4
5
6
Top view
MAM339
13
2
TR1
TR2
6
4
5
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−−80
V
VCEO
collector-emitter voltage
open base
−−65
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com