Nexperia

BAS40H

General-purpose Schottky diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

380

mV

IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

500

mV

VF

forward voltage

IF = 40 mA; pulsed; tp ≤ 300 µs; δ ≤

0.02; Tamb = 25 °C

-

-

1

V

VR = 30 V; Tamb = 25 °C

-

-

1

µA

IR

reverse current

VR = 40 V; Tamb = 25 °C

-

-

10

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

5

pF

102

10- 1

10- 2

10

1

0

mlc361

0.6

0.8

0.4

0.2

1

VF (V)

IF

(mA)

(1) (2) (3)

(4)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

103

102

10- 1

10- 2

10

1

0

mlc362

20

10

40

30 VR (V)

IR

(µA)

(1)

(2)

(3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAS40H

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Product data sheet

2 March 2023

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