1999 May 18

3

Philips Semiconductors

Preliminary specification

NPN general purpose transistors

BC846F; BC847F; BC848F series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC846AF; BC846BF

−

80

V

BC847AF; BC847BF; BC847CF

−

50

V

BC848AF; BC848BF; BC848CF

−

30

V

collector-emitter voltage

open base

BC846AF; BC846BF

−

65

V

BC847AF; BC847BF; BC847CF

−

45

V

BC848AF; BC848BF; BC848CF

−

30

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C