BC846 datasheet(4/10 Pages) PHILIPS

номер детали	BC846

подробное описание детали	NPN general purpose transistors

PDF	10 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 10 page

2004 Feb 06

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BC846; BC847; BC848

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB =30V; IE =0

−−

VCB =30V; IE =0;

Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

hFE

DC current gain

IC =10 µA; VCE =5V

BC846A; BC847A

−

BC846B; BC847B; BC848B

−

150

−

BC847C

−

270

−

DC current gain

IC = 2 mA; VCE =5V

BC846

110

−

450

BC847

110

−

800

BC846A; BC847A

110

180

220

BC846B; BC847B; BC848B

200

290

450

BC847C

420

520

800

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB = 5 mA;

note 1

−

200

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

700

−

IC = 100 mA; IB = 5 mA;

note 1

−

900

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

660

700

IC = 10 mA; VCE =5V

−−

770

collector capacitance

VCB =10V; IE =Ie =0;

f = 1 MHz

−

2.5

−

transition frequency

VCE =5V; IC =10mA;

f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2kΩ; f = 1 kHz;

B = 200 Hz

−

210

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