D4KB80

Document number: DS39997 Rev. 2 - 2

2 of 5

www.diodes.com

April 2020

© Diodes Incorporated

D4KB80

Maximum Ratings and Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

800

V

RMS Reverse Voltage

VR(RMS)

560

V

Average Rectified Output Current (Note 5)

@ TC = +140°C

(Without Heatsink)

@ TC = +30°C

IO

4.0

1.3

A

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

135

A

I2t Rating for Fusing (1ms < t < 8.3ms)

I2t

75

A2S

Maximum Forward Voltage (Per Element)

@IF = 2.0A

VFM

1.0

V

Peak Reverse Current

@TA = +25°C

At Rated DC Blocking Voltage (Note 6)

@TA = +125°C

IR

10

500

µA

Typical Total Capacitance (Per Element) (Note 7)

CT

17

pF

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Case (Note 5)

(Per Element)

RθJC

1.5

°C/W

Typical Thermal Resistance, Junction to Lead (Per Element)

RθJL

55

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PCB with 75mm x 75mm x 1.6mm aluminum heatsink.

6. Short duration pulse test used to minimize self-heating effect.

7. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.