D3V3S1B2LP

Document number: DS41600 Rev. 1 - 2

2 of 5

www.diodes.com

May 2019

© Diodes Incorporated

D3V3S1B2LP

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

410

W

8/20µs, Figure 3

Peak Pulse Current

IPP

50

A

8/20µs, Figure 3

ESD Protection

– Contact Discharge

VESD_CONTACT

±30

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

VESD_AIR

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RJA

500

C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

VRWM

—

—

3.3

V

—

Channel Leakage Current (Note 6)

IRM

—

10

500

nA

VRWM = 3.3V

Clamping Voltage, IEC 61000-4-5

VCL

—



—

7.0

V

IPP = 1A, tp = 8/20μs

—

—

9.5

IPP = 40A, tp = 8/20μs

Breakdown Voltage

VBR

3.8

—

6.5

V

IR = 1mA

Channel Input Capacitance

CT

—

118

—

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website

at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

(°C)