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PDTC143TS датащи(PDF) 5 Page - Nexperia B.V. All rights reserved

номер детали PDTC143TS
подробное описание детали  PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
PDF  15 Pages
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производитель  NEXPERIA [Nexperia B.V. All rights reserved]
домашняя страница  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PDTC143TS датащи(HTML) 5 Page - Nexperia B.V. All rights reserved

  PDTC143TS Datasheet HTML 1Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 2Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 3Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 4Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 5Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 6Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 7Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 8Page - Nexperia B.V. All rights reserved PDTC143TS Datasheet HTML 9Page - Nexperia B.V. All rights reserved Next Button
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2004 Aug 04
4
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 4.7 k
Ω, R2 = open
PDTA143T series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
Refer to standard mounting conditions.
2.
Reflow soldering is the only recommended soldering method.
3.
Refer to SOT883 standard mounting conditions; FR4 with 60
μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1.
Refer to standard mounting conditions.
2.
Reflow soldering is the only recommended soldering method.
3.
Refer to SOT883 standard mounting conditions; FR4 with 60
μm copper strip line.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT23
note 1
−
250
mW
SOT54
note 1
−
500
mW
SOT323
note 1
−
200
mW
SOT346
note 1
−
250
mW
SOT416
note 1
−
150
mW
SOT490
notes 1 and 2
−
250
mW
SOT883
notes 2 and 3
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
SOT23
note 1
500
K/W
SOT54
note 1
250
K/W
SOT323
note 1
625
K/W
SOT346
note 1
500
K/W
SOT416
note 1
833
K/W
SOT490
note 1
500
K/W
SOT883
notes 2 and 3
500
K/W



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