PDTA124E_SER

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 8 — 25 November 2011

3 of 17

NXP Semiconductors

PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k

, R2 = 22 k

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 70

m copper strip line, standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+10

V

negative

-

40

V

IO

output current

-

100

mA

ICM

peak collector current

single pulse;

tp  1ms

-

100

mA

Ptot

total power dissipation

Tamb  25 C

PDTA124EE (SOT416)

[1][2] -150

mW

PDTA124EM (SOT883)

[2][3] -250

mW

PDTA124ET (SOT23)

[1] -250

mW

PDTA124EU (SOT323)

[1] -200

mW

Tj

junction temperature

-

150

C

Tamb

ambient temperature

65

+150

C

Tstg

storage temperature

65

+150

C