PDTC115ES datasheet(6/15 Pages) NEXPERIA

номер детали	PDTC115ES

подробное описание детали	PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

PDF	15 Pages

Scroll/Zoom	100%

производитель	NEXPERIA [Nexperia B.V. All rights reserved]

домашняя страница	https://www.nexperia.com/

Logo

6 / 15 page

2004 Jul 30

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTA115E series

THERMAL CHARACTERISTICS

Notes

Refer to standard mounting conditions.

Reflow soldering is the only recommended soldering method.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT23

note 1

500

K/W

SOT54

note 1

250

K/W

SOT323

note 1

625

K/W

SOT346

note 1

500

K/W

SOT416

note 1

833

K/W

SOT490

notes 1 and 2

500

K/W

SOT883

notes 2 and 3

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0 A

−

−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0 A

−

−1

μA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0 A

−

−50

μA

hFE

DC current gain

VCE = −5 V; IC = −5 mA

−

VCEsat

collector-emitter saturation voltage

IC = −5 mA; IB = −0.25 mA

−

−150

Vi(off)

input-off voltage

IC = −100 μA; VCE = −5 V

−

−1.2

−0.5

Vi(on)

input-on voltage

IC = −1 mA; VCE = −0.3 V

−3

−1.6

−

input resistor

100

130

resistor ratio

0.8

1.2

collector capacitance

IE = ie = 0 A; VCB = −10 V;

f = 1 MHz

−

--------

PDTC115ES датащи(PDF) 6 Page - Nexperia B.V. All rights reserved

PDTC115ES датащи(HTML) 6 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

датащи скачать

ссылки URL