PDTA115T_SER_5

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 05 — 2 September 2009

4 of 17

NXP Semiconductors

PDTA115T series

PNP resistor-equipped transistors; R1 = 100 k

Ω, R2 = open

5.

Limiting values

[1]

Refer to standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60

µm copper strip line.

6.

Thermal characteristics

[1]

Refer to standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60

µm copper strip line.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

−5V

IO

output current (DC)

-

−100

mA

ICM

peak collector current

-

−100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT416

[1] -

150

mW

SOT346

[1] -

250

mW

SOT883

[2][3] -

250

mW

SOT54

[1] -

500

mW

SOT23

[1] -

250

mW

SOT323

[1] -

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2][3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W