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CEM2163 датащи(PDF) 3 Page - CET-MOS Technology Corp. |
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CEM2163 датащи(HTML) 3 Page - CET-MOS Technology Corp. |
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3 / 4 page ![]() CEM2163 3 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=-4.5V I D=-7.6A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.4 1.2 V GS=0V Ciss Coss Crss 3600 3000 2400 1800 1200 600 0 0 5 10 15 20 25 5 4 3 2 1 0 0.0 0.25 1 1.5 -V GS=1V 1.25 0.75 0.5 -V GS=4.5,4,3.5,1.5V 15 12 9 6 3 0 0 1 3 0.5 2 1.5 2.5 25 C -55 C T J=125 C |
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