BSP75G

Document number: DS33015 Rev. 5 - 2

3 of 8

www.diodes.com

June 2018

© Diodes Incorporated

BSP75G

Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)

Parameter

Symbol

Limit

Unit

Continuous Drain-Source Voltage

VDS

60

V

Drain-Source Voltage for Short Circuit Protection VIN = 5V

VDS(SC)

36

V

Continuous Input Voltage

VIN

-0.2 to +10

V

Peak Input Voltage

VIN

-0.2 to +20

V

Operating Temperature Range

TJ

-40 to +150

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Power Dissipation at TA = +25°C (Note 5)

PD

2.5

W

Continuous Drain Current @ VIN =10V; TA = +25°C (Note 5)

ID

1.6

A

Continuous Drain Current @ VIN =5V; TA = +25°C (Note 5)

ID

1.4

A

Pulsed Drain Current @ VIN = 10V

IDM

5

A

Continuous Source Current (Body Diode) (Note 5)

IS

3

A

Pulsed Source Current (Body Diode)

IS

5

A

Unclamped Single Pulse Inductive Energy

EAS

550

mJ

Load Dump Protection

VLOAD_DUMP

80

V

Electrostatic Discharge (Human Body Model)

VESD

4000

V

DIN Humidity Category, DIN 40 040

—

E

—

IEC Climatic Category, DIN IEC 68-1

—

40/150/56

—

Thermal Resistance

Characteristic

Symbol

Limit

Unit

Junction to Ambient (Note 5)

RθJA

50

°C/W

Junction to Ambient (Note 6)

RθJA

24

°C/W

Junction to Ambient (Note 7)

RθJA

208

°C/W

Notes:

5. For a device surface mounted on 37mm x 37mm x 1.6mm FR-4 board with a high coverage of single sided 2oz weight copper.

6. For a device surface mounted on FR-4 board and measured at t<=10s.

7. For a device mounted on FR-4 board with the minimum copper required for electrical connections.