Nexperia

PESD2USB3UX-T

Automotive infotainment ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tamb = 25 °C

-

-

3.3

V

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

[1]

4.2

6.7

8

V

IRM

reverse leakage current VRWM = 3.3 V; Tamb = 25 °C

[1]

-

1

50

nA

Cd

diode capacitance

[1]

-

0.56

0.7

pF

ΔCd/Cd

diode capacitance

matching

f = 1 MHz; VR = 0 V; Tamb = 25 °C

[2]

-

1

-

%

VCL

clamping voltage

IPP = 8 A; tp = TLP; Tamb = 25 °C

[3] [1] -

3.3

-

V

Rdyn

dynamic resistance

IR = 10 A; Tamb = 25 °C

[3] [1] -

0.3

-

Ω

[1] Measured from pin 1 or 2 to pin 3.

[2] ∆Cd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.

[3] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

006aaa407

-VCL -VBR -VRWM

-IRM

-IR

-IPP

V

I

P-N

-

+

Fig. 3. V-I characteristics for a unidirectional ESD

protection diode

VI (V)

0

5

4

2

3

1

aaa-031879

0.2

0.4

0.6

Cd

(pF)

0

Fig. 4. Relative capacitance as a function of reverse

standoff voltage; typical values

PESD2USB3UX-T

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2020. All rights reserved

Product data sheet

9 September 2020

4 / 12