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BCP5416Q датащи(PDF) 2 Page - Diodes Incorporated

номер детали BCP5416Q
подробное описание детали  NPN MEDIUM POWER TRANSISTORS IN SOT223
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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BCP5416Q датащи(HTML) 2 Page - Diodes Incorporated

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BCP5416Q / BCP5616Q
Datasheet Number: DS36981 Rev. 5 - 2
2 of 8
www.diodes.com
August 2021
© Diodes Incorporated
BCP5416Q / BCP5616Q
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BCP5416
BCP5616
Unit
Collector-Base Voltage
VCBO
45
100
V
Collector-Emitter Voltage
VCEO
45
80
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Collector Current
ICM
2
Continuous Base Current
IB
100
mA
Peak Pulse Base Current
IBM
200
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
2
W
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
62
°C /W
Thermal Resistance, Junction to Leads
(Note 6)
RθJL
19.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge – Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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