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SLG55321 датащи(PDF) 2 Page - Renesas Technology Corp |
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SLG55321 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 10 page ![]() 000-0055321-102 Page 2 of 9 SLG55321-130010V Pin Description Overview The SLG55321 N-Channel FET Gate Drivers are used for controlling and ramping slew rate of the source voltage on N-Channel FET switches from a CMOS logic level input. Intended as a supporting control element for switched voltage rails in energy efficient, advanced power management systems, the SLG55321 also integrates circuits to discharge opened switched voltage rails. The gate driver is available in a variety of configurations supporting a range of turn-on slew rates from 0.80 V/ms up to 2 V/ms which, depending on load supplying source voltages in the range of 1.0 V to 20 V results in ramp times from 200 µs to over 20ms (see Application Section). Additionally, an internal discharge circuit provides a controlled path to remove charge from open power rails. The SLG55321 gate drive is packaged in an 8 pin DFN package. When used with external N-Channel FETs, the SLG55321 supports low transient, energy efficient switching of high current loads at source voltages ranging from 1.0 V to 20 V. . Pin Name Pin Number Type Pin Description VCC 1 Power Supply Voltage ON 2 Input CMOS Logic Level DIS2 3 Output Discharge Connection for Load2. GND 4 GND Ground D 5 Input FET Drain Connection (Connect to FET with highest VD voltage) S/DIS1 6 Input/Output Source Connection, Discharge Connection for Load1 G1/G2/G3 7 Output FET Gate Drive for FET1, FET2, FET3. A minimum of a 1 k Ω resistor must be placed between the gate of MOSFET 1 and the gate of MOSFET 2 and another 1 k Ω resistor between the gate of MOSFET 2 and the gate of MOSFET 3. DIS3 8 Output Discharge Connection for Load3. Cannot exceed 5V. Ordering Information Part Number Ramp Slew Rate (Volts/ms) Delay Time (ms) Discharge Resistor (ohms) Package Type SLG55321-130010V 1.30 0.5 200 TDFN-8 SLG55321-130010VTR 1.30 0.5 200 TDFN-8 - Tape and Reel (3k units) |
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