1997 Oct 21

2

Philips Semiconductors

Product specification

High-speed double diode array

BAW56S

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• General purpose switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAW56S consists of two dual

high-speed switching diodes with

common anodes, fabricated in planar

technology, and encapsulated in the

small SMD SOT363 plastic package.

PINNING

PIN

DESCRIPTION

1

cathode (k1)

2

cathode (k2)

3

common anode (a1)

4

cathode (k3)

5

cathode (k4)

6

common anode (a2)

handbook, halfpage

65

4

12

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: A1t.

MSA370

12

3

65

4

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. One or more diodes loaded.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

single diode loaded; see Fig.2

−

250

mA

all diodes loaded; see Fig.2

−

100

mA

repetitive peak forward current

−

450

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

350

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C