1999 May 11

2

Philips Semiconductors

Product specification

High-speed double diode

BAV99

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching in thick and

thin-film circuits.

DESCRIPTION

The BAV99 consists of two

high-speed switching diodes

connected in series, fabricated in

planar technology, and encapsulated

in the small SOT23 plastic SMD

package.

PINNING

PIN

DESCRIPTION

1

anode

2

cathode

3

common connection

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: A7p = made in Hong Kong; A7t = made in Malaysia.

handbook, halfpage

21

3

MAM232

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

single diode loaded; see Fig.2;

note 1

−

215

mA

double diode loaded; see Fig.2;

note 1

−

125

mA

repetitive peak forward current

−

450

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C