BAS16VVQ

Document number: DS43976 Rev. 2 - 2

2 of 5

www.diodes.com

December 2021

© Diodes Incorporated

BAS16VVQ

Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

RMS Reverse Voltage

VR(RMS)

71

V

Forward Continuous Current (Note 5)

IFM

200

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

A

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

350

mW

Thermal Resistance Junction to Ambient Air (Note 5)

RJA

357

C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

100



V

IR = 100A

Forward Voltage

VF



0.715

V

IF = 1.0mA



0.855

IF = 10mA



1.0

IF = 50mA



1.25

IF = 150mA

Leakage Current (Note 6)

IR



0.5

μA

VR = 80V



50

μA



VR = 80V, TJ = 150C



30

μA



VR = 25V, TJ = 150C



30

nA



VR = 25V

Total Capacitance

CT



1.5

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



4.0

ns

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100

Notes:

5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.

6. Short duration pulse test used to minimize self-heating effect.