1997 Dec 19

2

Philips Semiconductors

Product specification

High-speed double diode

BAV70T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

Two high-speed switching diodes in a

common cathode configuration,

fabricated in planar technology, in a

very small rectangular SMD SOT416

(SC-75) package.

PINNING

PIN

DESCRIPTION

1

anode 1

2

anode 2

3

common cathode

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

Marking code: A4.

handbook, halfpage

12

3

MAM368

3

12

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode (unless otherwise specified)

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

single diode loaded

−

150

mA

both diodes loaded

−

75

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

170

mW

storage temperature

−65

+150

°C

junction temperature

−

+150

°C