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BAV23S датащи(PDF) 2 Page - NXP Semiconductors

номер детали BAV23S
подробное описание детали  General purpose double diode
PDF  8 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAV23S датащи(HTML) 2 Page - NXP Semiconductors

  BAV23S Datasheet HTML 1Page - NXP Semiconductors BAV23S Datasheet HTML 2Page - NXP Semiconductors BAV23S Datasheet HTML 3Page - NXP Semiconductors BAV23S Datasheet HTML 4Page - NXP Semiconductors BAV23S Datasheet HTML 5Page - NXP Semiconductors BAV23S Datasheet HTML 6Page - NXP Semiconductors BAV23S Datasheet HTML 7Page - NXP Semiconductors BAV23S Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 05
2
Philips Semiconductors
Product specification
General purpose double diode
BAV23S
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose where high
breakdown voltages are required.
DESCRIPTION
The BAV23S consists of two general
purpose diodes connected in series
fabricated in planar technology, and
encapsulated in the small SOT23
plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: L31.
handbook, halfpage
21
3
MAM232
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
−
250
V
VRRM
repetitive peak reverse
voltage
series connection
−
500
V
VR
continuous reverse voltage
−
200
V
VR
continuous reverse voltage
series connection
−
400
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
−
225
mA
double diode loaded; note 1; see Fig.2
−
125
mA
IFRM
repetitive peak forward current
−
625
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to surge;
see Fig.4
t=1
µs
−
9A
t = 100
µs
−
3A
t = 10 ms
−
1.7
A
Ptot
total power dissipation
Tamb =25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C



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