Nexperia

BAW101S-Q

High voltage double diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

357

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[2]

-

-

255

K/W

[1] Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm².

[2] One or more diodes loaded.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V(BR)R

reverse breakdown

voltage

IR = 100 µA; Tj = 25 °C

300

-

-

V

VF

forward voltage

IF = 100 mA; tp = 300 µs; δ = 0.02;

pulsed; Tj = 25 °C

-

-

1.1

V

VR = 250 V; Tj = 25 °C

-

-

150

nA

IR

reverse current

VR = 250 V; Tamb = 150 °C

-

-

50

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

-

-

2

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

Tj = 25 °C; measured at IR = 3 mA

-

-

50

ns

600

IF

(mA)

0

200

400

mbg384

0

2

1

VF (V)

(1)

(3)

(2)

(1) Tj = 150 °C; typical values

(2) Tj = 25 °C; typical values

(3) Tj = 25 °C; maximum values

Fig. 2. Forward current as a function of forward

voltage

mbg703

10

1

102

IFSM

(A)

10- 1

tp (µs)

1

104

103

10

102

Based on square wave currents.

Tj(init) = 25 °C

Fig. 3. Non-repetitive peak forward current as a

function of pulse duration; maximum values

BAW101S-Q

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Product data sheet

14 September 2021

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