BAS56

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© Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2010

4 of 12

Nexperia

BAS56

High-speed double diode

7.

Characteristics

[1] Tamb =25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB.

[2] Series connection.

[3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR =40 mA.

[4] When switched from IF = 400 mA; tr =30ns.

[5] When switched from IF = 400 mA; tr = 100 ns.

Table 7.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF =200 mA

[1] --1

V

IR

reverse current

VR = 60 V

-

-

100

nA

VR =60V;Tj =150 °C

-

-

100

μ

A

VR =120 V

[2] -

-

100

nA

VR =120 V; Tj = 150 °C

[2] -

-

100

μ

A

Cd

diode capacitance

f = 1 MHz; VR = 0 V

--2.5

pF

trr

reverse recovery time

[3] --6

ns

VFR

forward recovery voltage

[4] --2

V

[5] --1.5

V