Nexperia

BAS21TH

High-voltage switching diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

[1] [2] -

-

500

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

in free air

[3]

-

-

330

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.

[2] Thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power

losses.

[3] Soldering point of cathode tab.

10. Characteristics

Table 7. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed

-

-

1

V

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed

-

-

1.25

V

VR = 200 V

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz

-

-

5

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA

-

-

50

ns

aaa-029056

10

1

102

103

IF

(mA)

10-1

VF (V)

0

1.4

1.0

1.2

0.8

0.6

0.2

0.4

(3)

(4)

(5)

(2)

(1)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 85 °C

(4) Tj = 25 °C

(5) Tj = −40 °C

Fig. 2. Forward current as a function of forward

voltage; typical values

VF (V)

0

1.5

1.0

0.5

aaa-029057

200

400

600

IF

(mA)

0

Tamb = 25 °C

Tamb = 150 °C

Tamb = 175 °C

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 25 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

BAS21TH

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2019. All rights reserved

Product data sheet

18 January 2019

4 / 10