Nexperia

BAS16TH

High-speed switching diode

11. Test information

trr

(1)

+ IF

t

output signal

tr

tp

t

10 %

90 %

VR

input signal

V = VR + IF × RS

RS = 50 Ω

IF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

(1) IR = 1 mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig. 7. Reverse recovery time test circuit and waveforms

tr

t

tp

10 %

90 %

I

input signal

RS = 50 Ω

I

Ri = 50 Ω

OSCILLOSCOPE

1 kΩ

450 Ω

D.U.T.

mga882

VFR

t

output signal

V

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005

Fig. 8. Forward recovery voltage test circuit and waveforms

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

18-03-12

Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

1

2

3

Fig. 9. Package outline TO-236AB (SOT23)

BAS16TH

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2018. All rights reserved

Product data sheet

7 December 2018

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