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RJK1002DPP-A0 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали RJK1002DPP-A0
подробное описание детали  N-Channel MOSFET 100 V, 70 A, 7.6 mΩ
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK1002DPP-A0 датащи(HTML) 4 Page - Renesas Technology Corp

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RJK1002DPP-A0
Preliminary
R07DS1445EJ0101 Rev.1.01
Page 4 of 6
2020.1.9
16
20
12
8
4
−
25 0
25
50 75 100 125 150
0
Case Temperature Tc (°C)
Drain to Source on State Resistance
vs. Temperature
0.1
10
1
100
10000
1000
100
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
VDS = 10 V
ID = 35 A
0
0.5
1.0
1.5
2.0
100
40
VGS = 0 V
10 V
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
50
100
200
150
25
50
100
150
75
125
0
20
60
80
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = 35 A
VDD = 50 V
duty < 0.1%
Rg ³ 50 Ω
0
20
16
12
8
4
30
60
90
120
150
Gate Charge Qg (nC)
Dynamic Input Characteristics
VDD = 10 V
25 V
50 V
ID = 35 A



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