1996 Sep 17

3

Philips Semiconductors

Product specification

General purpose diodes

BAV100 to BAV103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

BAV100

−

60

V

BAV101

−

120

V

BAV102

−

200

V

BAV103

−

250

V

continuous reverse voltage

BAV100

−

50

V

BAV101

−

100

V

BAV102

−

150

V

BAV103

−

200

V

continuous forward current

see Fig.2; note 1

−

250

mA

repetitive peak forward current

−

625

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

9A

t = 100

µs

−

3A

t=1s

−

1A

total power dissipation

−

400

mW

storage temperature

−65

+175

°C

junction temperature

−

175

°C