AP8804

AP8804

Document number: DS32050 Rev. 2 - 5

2 of 9

www.diodes.com

February 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

VCC

Supply Voltage

-0.3 to +8

(Relative to GND)

V

VOUT

Output Voltage

VBIAS

Bias Input Voltage

-0.3 to +0.3

(Relative to GND)

V

TJ

Junction Temperature

150

°C

TST

Storage Temperature

-65 to +150

°C

Note:

These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for

extended periods may reduce device reliability.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and

transporting these devices.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

VCC

Supply Voltage

1.8

6

V

IBIAS

BIAS Input Current

-0.33

0

mA

IO

Output Current

50

350

mA

TA

Operating Ambient Temperature Range

0

70

°C

Package Thermal Data

Thermal Resistance

Package

Unit

Junction-to-Ambient,

θJA

TDFN2020-6

80

°C/W

Junction-to-Case,

θJC

TDFN2020-6

20

Electrical Characteristics (Under Operating Conditions)

VOUT = 0.2V, TA = 25°C (unless otherwise stated). All typical are at 25°C (FT = 0 to 70°C)

Parameter

Conditions

TA

Min

Typ.

Max

Unit

DC parameters

Bias voltage

VCC = 1.8V, RBIAS = 3.05kΩ

2

25

900

1040

1200

mV

FT

860

1240

Output current accuracy

3

VCC = 2.0V to 6V, VOUT = VCC – 1.8V, RBIAS = 4.1kΩ

25

225

250

275

mA

Saturated output current

tolerance

5

VCC = 2.0V, VOUT = 0.2V RBIAS = 3.05kΩ, IOUT =

350mA

25

15

%

FT

20

VCC = 2.0V, VOUT = 0.5V RBIAS = 3.05kΩ IOUT = 350mA

25

10

%

FT

15

VCC = 2.0V, VOUT = 0.15V RBIAS = 4.1kΩ, IOUT =

250mA

25

15

%

FT

20

Current Gain (IOUT/IBIAS)

3, 4

VCC = 2V, VOUT = 0.2V,

50µA < IBIAS < 350µA

25

1000

Quiescent current

VCC = 6V, RBIAS = Open Circuit

FT

100

150

µA

Supply current (Active)

VCC = 2V, RBIAS = 3.05kΩ, VOUT = 0.5V

FT

5.5

9

mA

Output Leakage (Off)

Vcc = 6V, RBIAS >= 2MΩ, VOUT = 6V

25

<1

10

uA

Output Leakage (Disabled)

Vcc = 0V, VOUT = 6V

25

<1

100

nA

AC parameters

Rise time (10% to 90%)

5

VCC = 2.0V,

VOUT = 0.5V,

RBIAS = O/C to 3.05kΩ

0.2

µs

Fall time (90% to 10%)

5

RBIAS = 3.05kΩ to O/C

0.2

Propagation delay(low to high)

5

VCC = 2.0V,

VOUT = 0.5V,

RBIAS = O/C to 3.05kΩ

0.4

Propagation delay(high to low)

5

RBIAS = 3.05kΩ to O/C

0.2

Notes:

2. RBIAS connected to GND see Figure 1

3. All active output current measurements are pulsed tests of 8us duration, 10% duty cycle

4. See Typical Characteristics for a graph of Output current vs. RBIAS value

5. See Figure 2