1996 Mar 20

2

Philips Semiconductors

Product specification

Schottky barrier diodes

BAT81; BAT82; BAT83

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed leaded glass

package

• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static

discharges, encapsulated in a hermetically-sealed subminiature SOD68

(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.

Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.

handbook, halfpage

MAM193

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

BAT81

−

40

V

BAT82

−

50

V

BAT83

−

60

V

continuous forward current

−

30

mA

repetitive peak forward current

−

150

mA

non-repetitive peak forward current

−

500

mA

storage temperature

−65

150

°C

junction temperature

−

125

°C