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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAT74 датащи(PDF) 4 Page - NXP Semiconductors |
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BAT74 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page  1996 Mar 19 4 Philips Semiconductors Product specification Schottky barrier double diode BAT74 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Notes 1. Temperature coefficient of forward voltage −0.6%/K. 2. Pulsed test: tp = 300µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT143 standard mounting conditions . SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 0.1 mA 240 mV IF = 1 mA; note 1 320 mV IF =10mA 400 mV IF =30mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 2; see Fig.4 2 µA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 5ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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